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SI3458BDV-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 4.1A 6TSOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI3458BDV-T1-E3
- Description：MOSFET N-CH 60V 4.1A 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：100mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 3.3W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-TSOP
- Package / Case：SOT-23-6 Thin, TSOT-23-6
Single FETs, MOSFETs datasheet and documents for SI3458BDV-T1-E3
Single FETs, MOSFETs Overview
The Vishay Siliconix SI3458BDV-T1-E3 is a single N-channel MOSFET utilizing TrenchFET technology, housed in a TSOP-6 surface-mount package. It features a drain-source voltage rating of 60 V and a continuous drain current of 4.1 A at 25 °C case temperature. The maximum on-state resistance is 0.100 Ω at VGS = 10 V and 0.128 Ω at VGS = 4.5 V. Typical gate charge is 3.5 nC at VGS = 4.5 V. The device supports an operating junction temperature range from -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- TrenchFET power MOSFET architecture for optimized performance
- 100% RDS(on) tested for guaranteed conduction characteristics
- Material categorization compliance defined by manufacturer standards
Single FETs, MOSFETs Applications
- Load switch for portable applications
- LED backlight switch
- DC/DC converter
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm lead-free or halogen-free status. Confirm that the TSOP-6 package dimensions match your PCB land pattern requirements. Validate thermal management strategies against the provided junction-to-ambient and junction-to-foot resistance ratings for your specific operating environment.
Single FETs, MOSFETs Selection Notes
Select this component when a 60 V N-channel switch with low on-resistance is required in a compact TSOP-6 footprint. Ensure the application gate drive voltage aligns with the specified RDS(on) test conditions of 4.5 V or 10 V. Consider the thermal dissipation limits relative to the expected ambient temperature and board copper area for reliable operation within the specified junction temperature range.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix Si3458 series of N-channel MOSFETs. It is designed as a general-purpose switching device leveraging TrenchFET technology to achieve low on-resistance in a small surface-mount package suitable for space-constrained portable electronics and power management circuits.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package type or voltage ratings without verifying electrical parameters and pin configurations.
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