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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 2.5A 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2.5A
- Rds On (Max) @ Id, Vgs：105mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：3.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.15W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The SI3552DV-T1-E3 is a Vishay Siliconix N- and P-channel MOSFET pair in a TSOP-6 package. It utilizes TrenchFET technology with 100% Rg testing. The N-channel offers VDS of 30 V, ID of 2.5 A, and RDS(on) of 0.105 Ω at VGS = ± 10 V. The P-channel provides VDS of -30 V, ID of -1.8 A, and RDS(on) of 0.200 Ω at VGS = ± 10 V. Total gate charge (Qg) is typically 2.1 nC for the N-channel and 2.4 nC for the P-channel. Maximum power dissipation is 1.15 W at TA = 25 °C, with an operating junction temperature range of -55 to +150 °C.
Feature Summary
- TrenchFET power MOSFET structure
- Dual N- and P-channel configuration
- 100% Rg tested
Applications
- Battery protection circuits
- Power management applications
- Load switches
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and material categorization documentation via official Vishay resources. Ensure ordering suffixes match specific lead-free requirements. Validate datasheet revision against current technical specifications before integration.
Selection Notes
Evaluate thermal resistance ratings and maximum power dissipation limits relative to PCB copper area and ambient temperature conditions. Verify gate drive voltage compatibility with specified RDS(on) thresholds. Assess dynamic performance parameters such as gate charge and switching times for high-frequency operation requirements.
Part Context
This component belongs to the Vishay Siliconix SI3 series of dual MOSFETs. It features a compact TSOP-6 surface-mount package designed for space-constrained designs. The device integrates complementary N- and P-channel transistors on a single substrate to facilitate efficient circuit implementation.
Replacement Considerations
SI3552BDV-T1-GE3
FAQ
What is the typical total gate charge for the N-channel?
The typical total gate charge (Qg) for the N-channel is 2.1 nC.
What is the maximum continuous drain current for the P-channel?
The maximum continuous drain current for the P-channel is -1.8 A at TJ = 150 °C.
Does the device include built-in diodes?
Yes, the configuration includes a single unit with a built-in diode for each channel.
