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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 2A/1.5A 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2A, 1.5A
- Rds On (Max) @ Id, Vgs：125mOhm @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id：600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：3.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The SI3585DV-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in a TSOP-6 surface-mount package. The device supports a drain-source voltage of -20 V and a continuous drain current of -4.7 A. Key electrical parameters include a maximum on-resistance of 29 mΩ at a gate-source voltage of -10 V, with a threshold voltage ranging from 0.8 V to 2.5 V. The component operates within a temperature range of -55°C to +150°C and features a power dissipation rating of 1.5 W.
Feature Summary
- Utilizes TrenchFET technology for enhanced performance
- Designed for low-side switching applications
- Supports surface-mount installation
Applications
- Load switching circuits
- Power distribution modules
- Battery protection systems
Procurement Notes
Verify the specific suffix against official manufacturer documentation to confirm exact binning or tape-and-reel specifications. Confirm RoHS compliance status through the latest datasheet revision. Ensure the ordering part number matches the required package variant and lead finish before finalizing procurement orders.
Selection Notes
Select this component for designs requiring a compact P-channel switch with moderate current handling capabilities. Evaluate the thermal resistance characteristics relative to the PCB copper area to ensure adequate heat dissipation. Compare the on-resistance and gate charge specifications against alternative devices to optimize switching efficiency and drive requirements.
Part Context
This part belongs to the SI3 series of small-signal MOSFETs from Vishay Siliconix. These components are widely used in portable electronics and consumer appliances due to their small footprint and efficient switching characteristics. The TSOP-6 package provides a balance between thermal performance and space constraints for single-channel power management tasks.
Replacement Considerations
Consult official substitution guides for verified alternatives. Potential replacements may include other -20V P-channel MOSFETs in TSOP-6 packages with comparable on-resistance and current ratings.
