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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 2A/1.5A 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2A, 1.5A
- Rds On (Max) @ Id, Vgs：125mOhm @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id：600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：3.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The SI3585DV-T1-GE3 is a dual N-channel and P-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a TSOP-6 surface-mount package. The device features a drain-source voltage of -20V for both channels, with continuous drain currents rated at 4A for the N-channel and 3.9A for the P-channel. On-resistance values are specified at 70mΩ for the N-channel and 100mΩ for the P-channel at a gate-source voltage of 12V. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 1.15W.
Feature Summary
- Dual configuration integrating complementary N-channel and P-channel transistors into a single compact package.
- TrenchFET technology implementation designed to minimize on-resistance and improve switching efficiency.
- Enhancement mode operation suitable for low-voltage logic control applications.
Applications
- Low-side and high-side switching circuits
- DC-DC converter synchronous rectification
- Battery protection modules
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through current datasheets as regulatory requirements may evolve. Cross-reference the full part number with authorized distributors to validate availability and authenticity before procurement.
Selection Notes
Select this component when a matched pair of N-channel and P-channel MOSFETs is required in a minimal footprint. Ensure the 20V voltage rating aligns with the system's maximum operating voltage. Evaluate thermal management needs based on the 1.15W power dissipation limit and the thermal resistance characteristics defined in the datasheet.
Part Context
This component belongs to the SI3 series of dual MOSFETs from Vishay Siliconix. These devices are engineered for space-constrained designs requiring complementary switching capabilities. The TSOP-6 package provides a balance between thermal performance and board area efficiency compared to larger discrete packages.
Replacement Considerations
Publicly confirmed substitute part numbers were not identified in the provided source material. Consult official replacement guides or contact the manufacturer directly for verified cross-reference information.
