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Product Detailed Parameters
- Description：MOSFET 2P-CH 8V 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：8V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：125mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id：450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.15W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The SI3905DV-T1-E3 is a dual P-channel MOSFET array manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a TSOP-6 surface-mount package. The device features a drain-source voltage rating of -8V and a continuous drain current capacity of 2A per channel. Key electrical parameters include a maximum on-resistance of 75 milliohms at a gate-source voltage of -4.5V. The component operates within a temperature range of -55°C to +150°C junction temperature and supports a power dissipation of 1.15W.
Feature Summary
- Dual complementary P-channel configuration for efficient switching applications
- TrenchFET technology ensures low on-resistance for improved power efficiency
- Compact TSOP-6 package design suitable for space-constrained layouts
Applications
- DC-DC converter circuits
- Power management systems
- Battery protection modules
Procurement Notes
Verify the specific manufacturer part number against official Vishay documentation to confirm authenticity. Check for end-of-life status or obsolescence notifications prior to procurement. Ensure that the TSOP-6 package dimensions match the target PCB footprint requirements. Confirm RoHS compliance details through the official datasheet rather than distributor summaries.
Selection Notes
Select this component when a dual P-channel solution is required for low-voltage applications. The -8V rating limits suitability to specific low-power domains. Evaluate thermal performance based on the 1.15W dissipation limit. Compare on-resistance values against alternative dual MOSFETs to ensure compatibility with system efficiency targets.
Part Context
This device belongs to the SI3 series of TrenchFET MOSFETs from Vishay Siliconix. The series focuses on providing high-performance switching capabilities in compact packages. The SI3905DV variant specifically addresses needs for dual-channel P-channel configurations in portable electronics and power management designs.
Replacement Considerations
Consult official Vishay substitution guides for verified alternatives. Generic cross-references may not match the specific -8V rating or TSOP-6 pinout. Verify thermal characteristics and on-resistance specifications before implementing any substitute part.
