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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：200mOhm @ 1.8A, 4.5V
- Vgs(th) (Max) @ Id：500mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.15W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The SI3909DV-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in a TSOP-6 surface-mount package designed for efficient thermal performance. The device supports single-supply operation with a drain-source voltage rating of -20V and a gate-source voltage limit of ±20V. Key electrical characteristics include a maximum on-resistance of 45 milliohms at a gate drive of -10V, enabling high current handling capabilities. The component operates within a temperature range of -55°C to +175°C junction temperature, ensuring reliability in demanding environments.
Feature Summary
- TrenchFET power MOSFET technology for optimized on-resistance and switching performance
- TSOP-6 surface-mount package providing low thermal resistance
- High current capability suitable for load switch and power management applications
Applications
- Load switches in portable equipment
- Power distribution circuits
- DC-DC converter input/output stages
Procurement Notes
Verify the specific suffix 'T1' corresponds to the required reel packaging quantity from the manufacturer's official documentation. Confirm RoHS compliance status through the latest datasheet revision. Check for any obsolescence notices or lifecycle changes directly from Vishay Semiconductors before finalizing procurement plans.
Selection Notes
Select this component when a P-channel MOSFET with low on-resistance in a compact TSOP-6 package is required. Ensure the application voltage does not exceed the -20V drain-source rating. Consider the thermal dissipation requirements relative to the package type and ambient operating conditions specified in the datasheet.
Part Context
This part belongs to the SI39xx series of P-channel MOSFETs from Vishay Siliconix. These devices are engineered for general-purpose power switching applications where space constraints and efficiency are critical. The TSOP-6 package offers a balance between current capacity and footprint size compared to larger packages.
Replacement Considerations
Consult Vishay's official cross-reference tools for verified substitutes. Potential alternatives may include other P-channel MOSFETs in TSOP-6 packages with similar voltage and resistance ratings, provided pin compatibility and thermal characteristics match.
