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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 1.8A 6TSOP
- Series：-
- Mfr：Vishay Siliconix
- Package：Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.8A
- Rds On (Max) @ Id, Vgs：145mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id：450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The SI3911DV-T1-E3 is a dual P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a 20 V drain-source breakdown voltage and a continuous drain current of 1.8 A. The device offers a maximum on-resistance of 0.145 Ω at a gate-source voltage of -4.5 V. Packaged in a TSOP-6 surface-mount configuration, it supports an operating junction temperature range up to 150 °C. This component is designed for general-purpose small-signal switching applications requiring low power consumption and efficient thermal performance.
Feature Summary
- Dual P-channel configuration with integrated body diodes
- TrenchFET technology for optimized on-resistance
- TSOP-6 surface-mount package for compact designs
Applications
- General-purpose small-signal switching
- Low-side load switches
- Power management circuits
Procurement Notes
Verify the specific suffix against official documentation, as the provided reference data indicates the SI3911DV-T1-GE3 variant is obsolete. Confirm availability through authorized distributors, noting that stock may be limited or discontinued. Ensure compliance with RoHS directives and check for any recent product change notices affecting lead times or manufacturing locations before finalizing procurement plans.
Selection Notes
Select this component when a dual P-channel solution is required in a minimal footprint. Compare the 0.145 Ω on-resistance against circuit load requirements to ensure acceptable conduction losses. Verify that the 20 V voltage rating exceeds the maximum system supply voltage with adequate margin. Consider the TSOP-6 package thermal characteristics for heat dissipation in enclosed environments.
Part Context
This part belongs to the Vishay Siliconix SI3 series of MOSFETs, which are characterized by their use of advanced TrenchFET process technology. The series focuses on delivering low on-resistance and fast switching speeds in small packages. The SI3911DV specifically addresses applications needing dual channel control in a single compact housing, distinguishing it from single-channel alternatives in the same family.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Vishay documentation for recommended alternates or perform a detailed parameter match analysis using approved vendor databases.
