SI3932DV-T1-GE3

Overview

The Vishay Siliconix SI3932DV-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in a TSOP-6 surface-mount package. It features a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 3.7 A at TC = 25 °C. The maximum on-state resistance (RDS(on)) is 0.058 Ω at VGS = 10 V and 0.073 Ω at VGS = 4.5 V. Gate charge (Qg) is typically 1.8 nC at VGS = 4.5 V. Operating junction temperature ranges from -55 °C to +150 °C with a maximum power dissipation of 1.4 W at TC = 25 °C.

Feature Summary

• Dual N-channel configuration within a compact TSOP-6 package
• TrenchFET power MOSFET architecture for optimized performance
• Logic-level gate drive capability with low gate charge

Applications

• Load switch for portable applications
• DC/DC converters

Procurement Notes

Verify the component against the official Vishay datasheet document number 65736 to confirm technical specifications and pinout alignment. Ensure that the ordering suffix matches the required lead-free and halogen-free material categorization standards. Cross-reference the manufacturer part number with authorized distribution channels to validate authenticity before procurement.

Selection Notes

Select this component when a dual N-channel topology is required in a small footprint. Evaluate thermal constraints carefully, as the device relies heavily on PCB copper area for heat dissipation. Confirm that the application's gate drive voltage aligns with the specified RDS(on) test conditions to ensure optimal conduction losses.

Part Context

This component belongs to the Vishay Siliconix SI39 series of power MOSFETs. It utilizes the TSOP-6 package, which provides a compact solution for space-constrained designs. The marking code MH identifies the specific device variant within the manufacturing traceability system.

Replacement Considerations

Consult the official Vishay documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package compatibility or generic parameter matching without validating electrical characteristics against the original specification sheet.

FAQ

What is the typical total gate charge (Qg) at VGS = 4.5 V?

The typical total gate charge is 1.8 nC when tested at VDS = 15 V, VGS = 4.5 V, and ID = 3.4 A.

What is the maximum junction-to-ambient thermal resistance?

The maximum junction-to-ambient thermal resistance (RthJA) is 110 °C/W under steady-state conditions.

Is the device suitable for logic-level switching?

Yes, the device specifies an on-state resistance at VGS = 4.5 V, indicating suitability for logic-level gate drive applications.