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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 2.1A 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.1A
- Rds On (Max) @ Id, Vgs：110mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The SI3983DV-T1-E3 is a dual P-channel MOSFET array manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve ultra-low on-resistance for high efficiency in enhancement mode operation. The device features a TSOP-6 surface-mount package and operates within a -55°C to +125°C temperature range. Key electrical parameters include a drain-source voltage of 20V, continuous drain current of 2.1A, and typical on-resistance values optimized for low-loss switching applications.
Feature Summary
- Dual P-channel configuration providing two independent channels in a single compact package
- TrenchFET technology implementation for enhanced power efficiency and reduced conduction losses
- Enhancement mode operation suitable for direct logic control interfaces
Applications
- Battery protection circuits requiring dual channel isolation
- Power management units for portable electronic devices
- Load switch applications in mobile communication equipment
Procurement Notes
Verify component authenticity through authorized distribution channels due to obsolescence status. Confirm RoHS compliance documentation matches the specific manufacturing batch. Validate package marking against official datasheet specifications to prevent counterfeit substitution during procurement processes.
Selection Notes
Select this component when dual P-channel isolation is required in space-constrained designs. Ensure thermal management strategies account for the TSOP-6 package limitations. Verify gate drive voltage compatibility with the 20V rating before integration into existing circuit architectures.
Part Context
This part belongs to the SI3 series of TrenchFET Power MOSFETs from Vishay Siliconix. The series is characterized by advanced silicon process technology designed for high-efficiency power switching. The SI3983DV variant specifically addresses dual-channel requirements within the standard TSOP-6 footprint family.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer resources for end-of-life transition guidance or equivalent series alternatives.
