SI4162DY-T1-GE3

$0.92

Description：MOSFET N-CH 30V 19.3A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:65120cc931a2 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

SI4162DY-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 19.3A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4162DY-T1-GE3

Description：MOSFET N-CH 30V 19.3A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：19.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1155 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4162DY-T1-GE3

SI4162DY-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI4162DY-T1-GE3 is a single N-channel Power MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a drain-source voltage rating of 30 V and a continuous drain current of 19.3 A at a case temperature of 25 °C. The device exhibits a maximum on-state resistance of 7.9 mΩ at VGS = 10 V and 10 A. Total gate charge is typically 20 nC at VGS = 10 V. It supports an operating junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET power MOSFET technology for optimized performance
Verified through 100% dynamic on-resistance testing
Validated with 100% unclamped inductive switching (UIS) testing

Single FETs, MOSFETs Applications

DC/DC converters
Voltage Regulator Modules (VRM)
Point-of-Load (POL) applications
Server power systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free status. Confirm that the component matches the exact Vishay part number before integration. Ensure all electrical parameters align with the target application requirements. Validate RoHS compliance through manufacturer certificates. Cross-reference datasheet revisions to ensure design consistency.

Single FETs, MOSFETs Selection Notes

Select this component based on its 30 V drain-source voltage capability and low on-state resistance characteristics. Consider the thermal management requirements associated with the SO-8 package and specified power dissipation limits. Evaluate the gate charge specifications for driving circuit compatibility. Assess the suitability of the TrenchFET technology for high-frequency switching operations within the intended system architecture.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix SI4 series of N-channel MOSFETs. It is manufactured using silicon technology and is designed for surface-mount assembly. The device is part of a broader family of power transistors intended for efficient power conversion and switching applications in electronic circuits.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified alternative part numbers. Do not substitute with generic equivalents without validating pinout and electrical specifications. Verify that any replacement maintains the required voltage and current ratings.