SI4200DY-T1-GE3

Overview

The Vishay Siliconix SI4200DY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET Gen III technology. It features a 25 V drain-source voltage rating and operates within a -55 °C to +150 °C junction temperature range. The device provides an on-state resistance of 0.025 Ω at VGS = 10 V and 0.030 Ω at VGS = 4.5 V, with a typical gate charge of 3.6 nC. Packaged in an SO-8 surface-mount configuration, it supports continuous drain currents up to 8 A at TC = 25 °C.

Feature Summary

• Dual N-channel configuration housed in an SO-8 package
• TrenchFET Gen III power MOSFET technology
• Halogen-free construction compliant with IEC 61249-2-21

Applications

• DC/DC converter circuits
• Game console power systems
• Notebook system power distribution

Procurement Notes

Verify the component against official Vishay datasheet document number 66825 to confirm authenticity. Ensure the ordering suffix matches the lead-free and halogen-free specifications. Cross-reference the manufacturer part number with authorized distributors to validate supply chain integrity before procurement.

Selection Notes

Select this component for low-voltage applications requiring dual N-channel isolation in a compact footprint. Evaluate thermal management requirements based on the specified junction-to-ambient resistance. Confirm that the 25 V breakdown voltage aligns with the target circuit's maximum operating conditions.

Part Context

This component belongs to the Vishay Siliconix Si4200 series of dual N-channel MOSFETs. It utilizes TrenchFET Gen III technology to achieve optimized switching performance and low conduction losses. The device is designed specifically for surface-mount assembly in space-constrained electronic designs.

Replacement Considerations

Consult the official Vishay documentation for verified substitute part numbers. Ensure any replacement maintains identical pinout configurations and meets or exceeds the original electrical ratings.

FAQ

What is the maximum continuous drain current for the SI4200DY?

The maximum continuous drain current is 8 A when the case temperature is maintained at 25 °C.

Does the SI4200DY meet RoHS directives?

Yes, the device is compliant with the RoHS Directive 2002/95/EC and is manufactured as a lead-free and halogen-free product.

What is the typical total gate charge (Qg) for this MOSFET?

The typical total gate charge is 3.6 nC under standard test conditions.