SI4202DY-T1-GE3

$1.64

Description：MOSFET 2N-CH 30V 12.1A 8SOIC
Series：TrenchFET®

SKU:d0c70436aec8 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 12.1A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：12.1A
Rds On (Max) @ Id, Vgs：14mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：710pF @ 15V
Power - Max：3.7W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4202DY-T1-GE3

Overview

The Vishay Siliconix SI4202DY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage of 30 V and a continuous drain current of 12.1 A at 25 °C case temperature. The on-state resistance is 0.014 Ω at VGS = 10 V and 0.017 Ω at VGS = 4.5 V. Gate charge is typically 5.4 nC at VGS = 4.5 V. Operating junction temperature ranges from -55 °C to 150 °C.

Feature Summary

Dual N-channel configuration with independent gate and source terminals for each channel.
TrenchFET power MOSFET architecture providing low on-state resistance.
Halogen-free construction compliant with IEC 61249-2-21 definition.

Applications

Synchronous buck converters
Notebook computer power management
Server power distribution

Procurement Notes

Verify the component against official Vishay datasheet document number 67092. Confirm the part marking matches the specified SO-8 package dimensions. Ensure the ordering suffix indicates lead-free and halogen-free compliance as documented. Validate that the received units match the exact model designation before integration into the circuit design.

Selection Notes

Select this component when a compact dual N-channel solution is required for 30 V applications. The low gate charge supports efficient switching performance. Verify thermal requirements against the maximum junction-to-ambient resistance ratings. Ensure the drive voltage meets the threshold for the desired on-resistance level.

Part Context

This device belongs to the Si4202 series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the standard SO-8 narrow package format. The product line incorporates TrenchFET technology for optimized power handling within a small footprint suitable for surface mount assembly.

Replacement Considerations

Consult the manufacturer's documentation for officially recommended alternative part numbers. Verify pinout compatibility and electrical specifications before substituting any other dual N-channel MOSFET in the design.