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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 19.8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：19.8A
- Rds On (Max) @ Id, Vgs：4.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2110pF @ 10V
- Power - Max：3.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4204DY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage (VDS) of 20 V and a continuous drain current (ID) of 19.8 A at TC = 25 °C. The on-state resistance (RDS(on)) is typically 0.0046 Ω at VGS = 10 V and ID = 10 A, or 0.006 Ω at VGS = 4.5 V and ID = 8 A. Total gate charge (Qg) is typically 45 nC at VGS = 10 V. The device supports an operating junction temperature range from -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration within a single surface-mount package
- TrenchFET power MOSFET architecture for optimized performance
- Comprehensive testing including 100% Rg and UIS verification
Applications
- DC/DC converters
- Fixed telecom equipment
- Notebook PC systems
Procurement Notes
Verify the component against official Vishay datasheet document number 65154 to confirm technical specifications and pinout alignment. Ensure that the ordering suffix matches the required lead-free and halogen-free compliance standards. Cross-reference manufacturer part numbers with authorized distributor listings to validate authenticity before integration into production designs.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching applications. Evaluate thermal management requirements based on the specified junction-to-ambient and junction-to-foot thermal resistances. Confirm that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance under expected load conditions.
Part Context
This part belongs to the Si4204 series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It is designed as a space-efficient alternative to discrete single-channel devices, integrating two independent channels in an SO-8 footprint. The product line emphasizes high current density and low conduction losses suitable for portable electronics.
Replacement Considerations
Direct substitutes must match the 20 V rating, dual N-channel topology, and SO-8 package dimensions. Verify equivalent RDS(on) values and thermal characteristics to ensure compatibility with existing board layouts and cooling strategies without redesigning the circuit.
FAQ
What is the maximum pulsed drain current for the SI4204DY?
The maximum pulsed drain current (IDM) is 50 A with a pulse width of 10 µs.
Does the device include body diode reverse recovery specifications?
Yes, the datasheet specifies reverse recovery time (trr), charge (Qrr), and fall/rise times for the intrinsic body diode.
Is the SI4204DY compliant with environmental directives?
Yes, it is compliant with the RoHS Directive 2002/95/EC and is defined as halogen-free according to IEC 61249-2-21.
