SI4210DY-T1-GE3

$0.39

Description：MOSFET 2N-CH 30V 6.5A 8SOIC
Series：TrenchFET®

SKU:0ee49d49a3bc Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 6.5A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.5A
Rds On (Max) @ Id, Vgs：35.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：445pF @ 15V
Power - Max：2.7W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4210DY-T1-GE3

Overview

The SI4210DY-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 30 V drain-source voltage and a maximum continuous drain current of 6.5 A at 25 °C case temperature. The on-state resistance is specified as 0.0355 Ω at VGS = 10 V and 0.044 Ω at VGS = 4.5 V. Total gate charge is typically 3.7 nC at VGS = 10 V. The device operates within a junction temperature range of -55 to 150 °C and is housed in an SO-8 surface-mount package.

Feature Summary

Dual N-channel configuration with independent channels for space-efficient circuit designs
TrenchFET power MOSFET architecture providing low on-state resistance
Validated for 100% unclamped inductive switching (UIS) performance
Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

Set top box circuits
Low current DC/DC converters

Procurement Notes

Verify the component against official Vishay datasheet documentation to confirm authenticity and technical compliance. Ensure that the specific ordering suffix matches project requirements. Cross-reference manufacturer part numbers with authorized distribution channels to validate supply chain integrity before procurement.

Selection Notes

Evaluate thermal management requirements based on the 70 °C/W maximum junction-to-ambient thermal resistance. Confirm that the operating voltage does not exceed the 30 V drain-source limit. Verify that the required gate drive voltage aligns with the specified RDS(on) thresholds at 4.5 V or 10 V for optimal conduction efficiency.

Part Context

This component belongs to the Vishay Siliconix Si4210 series of dual N-channel MOSFETs. It is manufactured using silicon technology and utilizes the SO-8 narrow package format. The product line incorporates TrenchFET technology to enhance power handling capabilities while maintaining a compact footprint suitable for dense printed circuit board layouts.