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Product Detailed Parameters
- Description：MOSFET 2N-CH 25V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：19.5mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1255pF @ 15V
- Power - Max：3.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix Si4226DY-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage (VDS) of 25 V and a continuous drain current (ID) of 8 A at TC = 25 °C. The on-state resistance (RDS(on)) is typically 0.0195 Ω at VGS = 4.5 V and 0.026 Ω at VGS = 2.5 V. Key dynamic parameters include a total gate charge (Qg) of 11 nC at VGS = 4.5 V and 24 nC at VGS = 10 V. Thermal characteristics specify a maximum junction-to-ambient resistance (RthJA) of 62.5 °C/W and a junction-to-foot resistance (RthJF) of 38 °C/W.
Feature Summary
- TrenchFET power MOSFET architecture for optimized performance
- Dual configuration with independent N-channel switches
- Validated for 100% Rg and Unclamped Inductive Switching (UIS)
Applications
- Synchronous buck converter circuits
Procurement Notes
Verify the specific ordering suffix to confirm lead-free status and halogen-free compliance. The -T1-E3 designation indicates tape-and-reel packaging and lead-free construction. Confirm that the component meets IEC 61249-2-21 standards if halogen-free requirements are mandatory for the assembly process.
Selection Notes
Select this component for low-voltage applications requiring a 25 V rating and up to 8 A continuous current. Evaluate thermal management needs based on the specified junction-to-ambient resistance. Ensure gate drive voltages align with the typical RDS(on) specifications at 4.5 V or 2.5 V to achieve desired conduction losses.
Part Context
This device belongs to the Si4 series of Vishay Siliconix MOSFETs. It is manufactured using silicon technology and utilizes the SO-8 narrow package format. The part number alias includes SI4226DY without the packaging suffix.
Replacement Considerations
Publicly documented recommended alternatives include the SI42 series variants. Verify pinout compatibility and electrical ratings before substitution.
FAQ
What is the maximum single-pulse avalanche energy?
The maximum single-pulse avalanche energy (EAS) is 5 mJ.
What is the body diode reverse recovery time?
The body diode reverse recovery time (trr) ranges from 25 ns to 50 ns under specified test conditions.
Is the device tested for UIS capability?
Yes, the datasheet confirms that the device is 100% tested for Unclamped Inductive Switching (UIS).
