SI4226DY-T1-GE3

Overview

The Vishay Siliconix SI4226DY-T1-GE3 is a dual N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 25 V drain-source voltage rating and an SO-8 surface-mount package. The device provides two independent channels with a continuous drain current of 8 A at 25 °C case temperature. On-state resistance is specified as 0.0195 Ω at VGS = 4.5 V and 0.026 Ω at VGS = 2.5 V. Total gate charge is typically 24 nC at VGS = 10 V. Thermal performance includes a junction-to-ambient resistance of 62.5 °C/W maximum.

Feature Summary

• Dual N-channel configuration in a single SO-8 package
• TrenchFET power MOSFET architecture for low on-resistance
• 100% tested for gate resistance and unclamped inductive switching

Applications

• Synchronous buck converter circuits

Procurement Notes

Verify the specific ordering suffix to confirm compliance requirements. The -E3 suffix indicates lead-free construction, while the -GE3 suffix confirms both lead-free and halogen-free status according to IEC 61249-2-21 standards. Confirm that the component matches the exact datasheet revision required for your design specifications before finalizing procurement.

Selection Notes

Select this component for applications requiring dual isolated N-channel switches within a compact footprint. Ensure the operating voltage remains below the 25 V drain-source limit. Evaluate thermal management strategies based on the specified junction-to-ambient resistance ratings under steady-state conditions to maintain safe operating temperatures.

Part Context

This part belongs to the Vishay Siliconix SI4 series of TrenchFET power MOSFETs. It is designed for general-purpose switching applications where space efficiency and dual-channel functionality are prioritized. The SO-8 package allows for standard surface-mount assembly processes compatible with automated pick-and-place equipment.

Replacement Considerations

Direct replacements must match the dual N-channel topology, 25 V rating, and SO-8 package. Verify that alternative components meet or exceed the 0.026 Ω on-resistance at 2.5 V gate drive and possess equivalent thermal characteristics for reliable operation in synchronous buck configurations.