SI4228DY-T1-E3

Overview

The Vishay Siliconix Si4228DY-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage of 25 V and a continuous drain current of 8 A at 25 °C case temperature. The on-state resistance is 0.018 Ω at VGS = 10 V and 7 A. Total gate charge is typically 7.8 nC at VGS = 4.5 V. Operating junction temperature ranges from -55 to 150 °C.

Feature Summary

• Dual N-channel configuration with integrated body diodes
• TrenchFET power MOSFET architecture for optimized performance
• 100% tested for reverse bias safe operating area and unclamped inductive switching

Applications

• Synchronous buck converter circuits
• DC/DC converter designs

Procurement Notes

Verify the component against official Vishay datasheet document number 67908. Confirm the specific ordering suffix matches the required lead-free specification. Ensure that the SO-8 narrow package dimensions align with the target PCB layout requirements before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring low gate charge and high efficiency in compact form factors. Evaluate thermal management strategies based on the specified junction-to-ambient and junction-to-foot thermal resistance ratings. Validate the on-state resistance characteristics against the intended gate drive voltage levels for optimal conduction losses.

Part Context

This device belongs to the Vishay Siliconix Si42xx series of dual N-channel MOSFETs. It shares the SO-8 narrow footprint common across multiple variants within the family. The part utilizes standard TrenchFET generation technology designed to minimize on-resistance while maintaining robust avalanche capabilities.

Replacement Considerations

Consult the official Vishay documentation for direct cross-reference recommendations. Verify pinout compatibility and absolute maximum ratings when considering alternative dual MOSFET packages.