SI4322DY-T1-E3

$2.04

Description：MOSFET N-CH 30V 18A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:29470d4d4da4 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI4322DY-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 18A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4322DY-T1-E3

Description：MOSFET N-CH 30V 18A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1640 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 5.4W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4322DY-T1-E3

SI4322DY-T1-E3

Single FETs, MOSFETs Overview

The SI4322DY-T1-E3 is an N-channel enhancement mode MOSFET from the Vishay Siliconix Si4 series, utilizing TrenchFET technology. It features a 30V drain-source voltage rating and supports a continuous drain current of 18A. The component is housed in an 8-SOIC surface-mount package. Designed for power switching applications, it operates with low on-resistance characteristics typical of the TrenchFET architecture.

Single FETs, MOSFETs Feature Summary

N-channel enhancement mode operation
TrenchFET power MOSFET technology
Surface-mount SOIC-8 packaging

Single FETs, MOSFETs Applications

Power switching circuits
DC-DC converter modules
Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify component status as obsolete data indicates discontinuation. Confirm availability through authorized distributors or substitute part numbers such as FDS6680A. Ensure RoHS compliance documentation is obtained from official sources before procurement planning.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage high-current applications requiring compact surface-mount solutions. Consider the 30V VDS and 18A ID ratings against circuit requirements. Evaluate thermal performance within the SOIC-8 package constraints for specific power dissipation needs.

Single FETs, MOSFETs Part Context

Part of the Si4 TrenchFET Power MOSFET family offering various VGS and VDS options. Manufactured by Vishay / Siliconix using silicon technology. The -E3 suffix typically denotes lead-free and RoHS compliant construction.