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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 6.6A 8SOIC
- Series：-
- Mfr：Vishay Siliconix
- Package：Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel, Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6.6A, 3.8A
- Rds On (Max) @ Id, Vgs：20mOhm @ 9.1A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.3W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4500BDY-T1-E3 is a P-Channel Power MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in an SOIC-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 26 A. The on-resistance (Rds(on)) is specified at 7.5 mΩ with a gate-source voltage (Vgs) of -10 V. Additional electrical parameters include a gate charge (Qg) of 29 nC, a threshold voltage (Vgs(th)) of -1 V, and a power dissipation (Pd) of 6 W. The component operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Incorporates TrenchFET technology for optimized performance characteristics.
- Designed for surface-mount installation using the SOIC-8 package format.
Applications
- DC-DC converter circuits
- Power management systems
- Load switching applications
Procurement Notes
Verify the specific manufacturer datasheet for the SI4500BDY-T1-E3 to confirm current availability status and obsolescence notices. Cross-reference official documentation to ensure compliance with RoHS directives and other environmental regulations relevant to your region. Confirm that the SOIC-8 package dimensions match your PCB footprint requirements before finalizing procurement decisions.
Selection Notes
Select this component when a P-Channel MOSFET with a 30 V rating and high current capability near 26 A is required. Ensure the application design accommodates the 7.5 mΩ on-resistance at -10 V gate drive to manage conduction losses effectively. Verify that the thermal management strategy supports the 6 W power dissipation rating within the specified operating temperature range.
Part Context
This part belongs to the Vishay Siliconix SI4 series of discrete power MOSFETs. These components are engineered for general-purpose power switching applications requiring efficient control in compact surface-mount designs. The TrenchFET architecture is utilized to achieve low on-resistance relative to the package size.
Replacement Considerations
Consult official Vishay documentation for confirmed substitute part numbers. Evaluate alternatives based on matching Vds, Id, Rds(on), and package compatibility. Verify that any replacement maintains the same polarity and electrical specifications for direct integration.
