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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 7.2A 8SOIC
- Series：-
- Mfr：Vishay Siliconix
- Package：Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：7.2A, 4.6A
- Rds On (Max) @ Id, Vgs：14.5mOhm @ 9.6A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4511DY-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -40V drain-source voltage and a continuous drain current of 8A. The device offers low on-resistance values of 24mΩ and 27mΩ for its two channels. Operating within a temperature range of -55°C to +150°C, it is housed in an SOIC-8 surface-mount package. Key electrical characteristics include a gate-source voltage limit of ±20V and a typical gate charge of 13.3nC and 41.5nC.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs into a single compact package.
- TrenchFET power transistor technology designed for high efficiency and low conduction losses.
- Enhancement mode operation suitable for logic-level driving applications.
Applications
- DC-DC converter circuits requiring synchronous rectification.
- Load switching applications in portable electronic devices.
- Power management modules for automotive systems.
Procurement Notes
Verify the specific ordering suffix and tape-and-reel specifications against the manufacturer's latest datasheet before procurement. Confirm RoHS compliance status and packaging quantity requirements with authorized distributors to ensure alignment with production needs.
Selection Notes
Select this component for designs requiring dual N-channel isolation in a small footprint. Evaluate thermal performance based on the specified power dissipation limits and ensure the gate drive voltage aligns with the threshold and maximum ratings for optimal switching performance.
Part Context
This part belongs to the SI4 series of TrenchFET MOSFETs by Vishay Siliconix. It is designed for general-purpose power switching applications where space constraints and efficiency are critical. The dual configuration allows for simplified circuit layouts in bridge and half-bridge topologies.
Replacement Considerations
Consult official substitution guides for electrically equivalent dual N-channel MOSFETs in SOIC-8 packages. Verify pin compatibility and parameter margins before replacing the original component in existing designs.
