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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.9A 8SOIC
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.9A, 3.5A
- Rds On (Max) @ Id, Vgs：65mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：235pF @ 10V
- Power - Max：900mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4532DY is a dual N- and P-channel enhancement mode field effect transistor manufactured by onsemi using high cell density DMOS technology. It operates with a drain-source voltage of 30 V for the N-channel and -30 V for the P-channel. The continuous drain current ratings are 3.9 A for the N-channel and -3.5 A for the P-channel. Static drain-source on-resistance is specified at 0.065 Ohms (N-channel) and 0.085 Ohms (P-channel) at VGS = 10 V. Total gate charge is typically 15 nC. The device is housed in an SOIC-8 package and supports an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Dual N- and P-channel configuration in a single surface mount package
- High density cell design for extremely low on-state resistance
- Superior switching performance tailored for fast switching applications
- Lead-free and halide-free construction
Applications
- Notebook computer power management
- Battery powered circuits
- Low voltage applications requiring low inline power loss
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details such as tape and reel specifications. Ensure compliance with RoHS directives and lead-free requirements when sourcing components for production. Cross-reference datasheet revision numbers to validate electrical characteristics against current manufacturing standards.
Selection Notes
Select this component for designs requiring complementary N- and P-channel MOSFETs in a compact footprint. Evaluate thermal resistance values based on the specific copper pad area used on the printed circuit board. Confirm that the required switching speeds and on-state resistance meet the efficiency targets of the target application.
Part Context
This part belongs to the family of dual MOSFETs produced by onsemi utilizing proprietary DMOS technology. It is designed to minimize on-state resistance while providing high power handling capability in widely used surface mount packages suitable for portable electronics.
Replacement Considerations
Consult official substitution guides or manufacturer databases for verified equivalent parts. Verify pinout compatibility, voltage ratings, and thermal characteristics before implementing any alternative components in existing designs.
