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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 4.4A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.4A, 3.7A
- Rds On (Max) @ Id, Vgs：36mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4539ADY-T1-E3 is a dual N- and P-channel enhancement mode MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance within an SOIC-8 surface-mount package. The device supports a drain-source voltage of -40 V for the N-channel and 20 V for the P-channel. Continuous drain currents are rated at 3 A for the N-channel and 3.7 A for the P-channel. The component operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- Integrated dual configuration combining N-channel and P-channel transistors in a single package
- TrenchFET power transistor technology for optimized performance
- Lead-free finish compliant with RoHS standards
Applications
- DC/DC converter circuits
- Power management modules
- Load switching applications
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the part number matches the specific suffix requirements for lead-free and halogen-free specifications. Review official datasheets for electrical characteristics relevant to the specific design environment before procurement.
Selection Notes
Select this component when a compact dual MOSFET solution is required for low-voltage power switching. Ensure the circuit voltage does not exceed the -40 V N-channel or 20 V P-channel ratings. Consider the thermal dissipation capabilities of the SOIC-8 package relative to the expected current load and ambient operating conditions.
Part Context
This part belongs to the SI4 series of dual MOSFETs from Vishay Siliconix. It is designed for space-constrained applications requiring complementary N and P channel functionality. The product line emphasizes high density and efficient power handling in small outline packages.
Replacement Considerations
Public documentation lists SI4539DY-T1-E3 as a recommended alternative. Verify pinout compatibility and electrical parameter alignment before substitution.
