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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel, Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：35mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：2.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4544DY-T1-GE3 is a dual N-channel Power MOSFET from the Vishay Siliconix SI4 series, utilizing TrenchFET technology. It integrates two independent N-channel devices within an SO-8 surface-mount package. The component features a drain-source voltage (Vds) rating of 30V and a gate-source voltage (Vgs) limit of ±20V. Continuous drain current (Id) specifications are rated at 6.5A for the primary channel and 5.7A for the secondary channel at case temperature. The device exhibits low on-resistance characteristics typical of the TrenchFET architecture, designed for efficient power switching applications.
Feature Summary
- Dual N-channel configuration in a single compact SO-8 package
- TrenchFET technology for optimized on-resistance and switching performance
- Surface-mount design suitable for automated assembly processes
Applications
- DC-DC converter circuits requiring dual synchronous rectification
- Load switch applications with independent control requirements
- Power management modules for portable electronic devices
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status as indicated in official documentation. Check for obsolescence notifications or lifecycle changes prior to procurement. Ensure storage conditions meet moisture sensitivity level requirements for lead-free packages.
Selection Notes
Evaluate thermal dissipation capabilities based on PCB copper area and ambient temperature. Compare on-resistance values against system efficiency targets. Verify gate drive voltage compatibility with the ±20V maximum rating. Consider package thermal resistance for heat sinking requirements in high-current scenarios.
Part Context
This component belongs to the Vishay SI4 series of TrenchFET MOSFETs, known for combining low RDS(on) with fast switching speeds. The dual configuration allows space-saving designs in applications requiring multiple switching elements. The SO-8 package provides a balance between power handling capability and board space efficiency.
Replacement Considerations
Check for direct pin-compatible alternatives within the same manufacturer's portfolio. Verify that substitute components match the 30V Vds rating and dual N-channel configuration. Ensure thermal and electrical parameters meet or exceed original specifications.
