SI4559ADY-T1-E3

$2.01

Description：MOSFET N/P-CH 60V 5.3A 8SOIC
Series：TrenchFET®

SKU:a22f89b3e00a Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 60V 5.3A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：5.3A, 3.9A
Rds On (Max) @ Id, Vgs：58mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V, 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：665pF @ 15V, 650pF @ 15V
Power - Max：3.1W, 3.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4559ADY-T1-E3

Overview

The SI4559ADY-T1-E3 is a Vishay Siliconix N- and P-channel MOSFET pair in an SO-8 package. It utilizes TrenchFET technology with a 60 V drain-source voltage rating. The N-channel offers a maximum RDS(on) of 0.058 Ω at ±10 V and 0.072 Ω at ±4.5 V, with a continuous current of 5.3 A. The P-channel provides a maximum RDS(on) of 0.120 Ω at ±10 V and 0.150 Ω at ±4.5 V, supporting 3.9 A. Total gate charge reaches 20 nC for the N-channel and 22 nC for the P-channel. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

Integrated N- and P-channel configuration within a single dual SO-8 package
TrenchFET power MOSFET architecture optimized for low on-resistance
Validated for 100% gate resistance and unclamped inductive switching (UIS)

Applications

CCFL Inverter circuits

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status by reviewing the specific material categorization documentation provided by Vishay. Ensure ordering suffixes match exact lead-free specifications required for assembly processes.

Selection Notes

Evaluate thermal management requirements against junction-to-ambient resistance limits. Verify that gate drive voltages align with specified RDS(on) thresholds at 4.5 V or 10 V. Assess avalanche energy ratings if inductive load protection is necessary for the target application design.

Part Context

This component belongs to the SI4 series of dual MOSFETs manufactured by Vishay Siliconix. It represents a specialized solution combining complementary channel types in a compact surface-mount footprint, designed to simplify circuit board layout for applications requiring paired switching elements.