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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V 5.3A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：5.3A, 3.9A
- Rds On (Max) @ Id, Vgs：58mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V, 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：665pF @ 15V, 650pF @ 15V
- Power - Max：3.1W, 3.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4559ADY-T1-GE3 is a dual N- and P-channel MOSFET in an SO-8 package. It utilizes TrenchFET technology with a 60 V drain-source voltage rating. The N-channel offers a maximum on-resistance of 0.058 Ω at 10 V gate drive, while the P-channel provides 0.120 Ω under identical conditions. Continuous drain currents are rated at 5.3 A for the N-channel and -3.9 A for the P-channel at 25 °C case temperature. The device supports a junction temperature range from -55 °C to +150 °C.
Feature Summary
- Integrated N- and P-channel pair within a single SO-8 surface-mount package
- TrenchFET power MOSFET architecture optimized for low on-resistance
- Validated for 100% gate resistance and unclamped inductive switching (UIS) testing
Applications
- CCFL Inverter circuits
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer's datasheet document number 73624 against the physical marking on the SO-8 package. Confirm that the ordering suffix matches the halogen-free specification required for the project. Ensure the supplier provides traceability documentation consistent with Vishay manufacturing standards.
Selection Notes
Select this component when a matched N/P pair is required for synchronous rectification or bridge configurations. Evaluate thermal management requirements based on the specified junction-to-foot resistance. Verify that the application's gate drive voltage aligns with the specified thresholds for optimal conduction characteristics.
Part Context
This part belongs to the Vishay SI4 series of power MOSFETs. It is manufactured using silicon technology and represents a specific configuration within the broader family of dual-channel devices designed for compact power switching applications.
Replacement Considerations
SI4559ADY-T1-E3
FAQ
What is the maximum continuous drain current for the N-channel?
The maximum continuous drain current for the N-channel is 5.3 A at a case temperature of 25 °C.
Does the device support unclamped inductive switching?
Yes, the datasheet confirms that 100% of units are tested for UIS capability.
What is the operating junction temperature range?
The operating junction and storage temperature range is -55 °C to +150 °C.
