SI4561DY-T1-E3

$0.46

Description：MOSFET N/P-CH 40V 6.8A 8SOIC
Series：TrenchFET®

SKU:b5ce2e0be73a Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 40V 6.8A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：6.8A, 7.2A
Rds On (Max) @ Id, Vgs：35.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：640pF @ 20V
Power - Max：3W, 3.3W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4561DY-T1-E3

Overview

The SI4561DY-T1-E3 is a complementary N- and P-channel MOSFET array housed in an 8-SOIC package. It features a maximum drain-source voltage of 40V for both channels. The continuous drain current reaches 6.8A. On-resistance is specified at 35.5 milliohms for the N-channel and 42 milliohms for the P-channel at a gate drive of 10V. The device utilizes TrenchFET technology to achieve low power dissipation and high efficiency in switching applications.

Feature Summary

Complementary N- and P-channel configuration within a single package
Low on-resistance utilizing TrenchFET planar technology
High efficiency switching capability with minimal power loss

Applications

DC/DC converter circuits
Power management modules
Motor control systems

Procurement Notes

Verify component authenticity through authorized Vishay distributors or direct manufacturer channels. Confirm RoHS compliance status and lot traceability prior to integration. Ensure storage conditions adhere to moisture sensitivity levels defined in the datasheet to maintain reliability during surface mount assembly processes.

Selection Notes

Select this component for designs requiring matched N/P pairs in space-constrained layouts. Evaluate thermal performance under peak load conditions given the SOIC-8 footprint. Compare on-resistance specifications against system voltage drops to ensure adequate efficiency margins for the intended power application scope.

Part Context

This part belongs to the SI4 series of complementary MOSFETs from Vishay Siliconix. It integrates discrete N-channel and P-channel devices into one unit, simplifying bill of materials and PCB layout. The family targets portable electronics and battery-powered equipment where size and power efficiency are critical design constraints.