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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：16mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2390pF @ 20V
- Power - Max：3.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4563DY-T1-E3 is a dual N-channel and P-channel MOSFET manufactured by Vishay Siliconix, housed in a surface-mount SOIC-8 package. This component utilizes TrenchFET technology to provide enhanced performance characteristics for power management applications. The device integrates an N-channel MOSFET with a drain-source voltage of 30 V and a continuous drain current of 9 A, alongside a P-channel MOSFET rated for 30 V and 7 A. Both transistors feature low on-resistance values of 12 milliohms and 16 milliohms respectively, ensuring efficient power handling. The unit operates within a temperature range of -55 °C to +150 °C junction temperature.
Feature Summary
- Integrated dual configuration combining N-channel and P-channel enhancement mode field-effect transistors within a single compact package.
- Utilizes advanced TrenchFET technology to achieve significantly lower specific on-resistance compared to standard planar MOSFETs.
- Designed for high-efficiency synchronous rectification and load switch applications requiring minimal conduction losses.
Applications
- Synchronous rectification in DC/DC converter circuits
- High-side and low-side load switching modules
- Power distribution units for portable electronic devices
Procurement Notes
Verify the exact ordering suffix and manufacturer documentation when sourcing this component. Confirm RoHS compliance status through official datasheets as regulatory requirements may vary by production batch. Ensure that the SOIC-8 footprint matches your PCB design constraints before finalizing procurement plans.
Selection Notes
Select this part for designs requiring matched N/P channel pairs in a small form factor. Evaluate thermal dissipation capabilities based on the specified power dissipation ratings and ambient operating conditions. Compare on-resistance specifications against alternative packages if higher current capacity is required for your specific application load.
Part Context
This component belongs to the SI4 series of dual MOSFETs from Vishay Siliconix, which are widely used in consumer electronics and industrial power supplies. The SOIC-8 packaging allows for automated surface-mount assembly, facilitating high-volume manufacturing processes while maintaining reliable electrical performance across varying environmental temperatures.
Replacement Considerations
Check for direct pin-compatible alternatives such as the SI4563EDY or similar dual MOSFETs from other manufacturers. Verify that substitute components meet the same voltage, current, and on-resistance specifications to ensure circuit compatibility without redesigning the layout.
