SI4563DY-T1-GE3

Description：MOSFET N/P-CH 40V 8A 8SOIC
Series：TrenchFET®

SKU:857b339565dc Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 40V 8A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：8A
Rds On (Max) @ Id, Vgs：16mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2390pF @ 20V
Power - Max：3.25W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4563DY-T1-GE3

Overview

The SI4563DY-T1-GE3 is a silicon N-channel MOSFET from the Vishay Siliconix TrenchFET series, housed in an SOIC-8 surface-mount package. It features a drain-source voltage rating of 60V and a continuous drain current of 27A at 25°C. The device exhibits a maximum on-resistance of 12 milliohms when driven by a gate-source voltage of 10V. Thermal performance includes a power dissipation capacity of 3.1W at ambient temperature and 50W at case temperature. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Utilizes TrenchFET technology for optimized low on-resistance characteristics.

Applications

DC-DC converter circuits
Load switching applications
Power management systems

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and specific datasheet revisions prior to integration. Ensure storage conditions adhere to moisture sensitivity level requirements to maintain solderability and electrical integrity during assembly processes.

Selection Notes

Evaluate thermal resistance parameters against system heat dissipation capabilities to ensure reliable operation under load. Verify that the driving circuit provides sufficient gate voltage to achieve the specified low on-resistance values. Consider package thermal performance and PCB layout constraints for optimal heat spreading and junction temperature management.

Part Context

This component belongs to the SI4 series of discrete power MOSFETs manufactured by Vishay Siliconix. The series utilizes advanced trench gate technology to deliver high current density and low conduction losses. The SOIC-8 packaging facilitates automated surface-mount assembly while providing adequate thermal performance for medium-power applications.