SI4567DY-T1-E3

SI4567DY-T1-E3

$0.85
  • Description:MOSFET N/P-CH 40V 5A/4.4A 8SOIC
  • Series:TrenchFET®

SKU:9df0b7909c98 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 40V 5A/4.4A 8SOIC
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:5A, 4.4A
  • Rds On (Max) @ Id, Vgs:60mOhm @ 4.1A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:355pF @ 20V
  • Power - Max:2.75W, 2.95W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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SI4567DY-T1-E3

Part Context

The SI4567DY-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix. It belongs to the TrenchFET power MOSFET family, designed for high-efficiency switching applications. The component utilizes silicon technology and is housed in an SO-8 surface-mount package. As indicated by the suffix, it is supplied in a tape and reel format suitable for automated assembly processes.

SI4567DY-T1-E3SI4567DY-T1-E3
$0.85
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