SI4567DY-T1-GE3

Overview

The SI4567DY-T1-GE3 is a dual N-channel and P-channel Power MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance within an SOIC-8 surface-mount package. The device features a drain-source breakdown voltage of 60V for the N-channel and -60V for the P-channel, with continuous drain currents rated at 5.2A and -5.0A respectively. Typical on-resistances are specified at 29 milliohms and 32 milliohms. The component supports a maximum power dissipation of approximately 3 watts and operates across a temperature range from -55°C to +150°C.

Feature Summary

• Integrated dual configuration combining N-channel and P-channel transistors in a single compact package
• Low on-resistance characteristics enabled by advanced TrenchFET process technology
• High thermal performance capability suitable for dense surface-mount applications

Applications

• DC-DC converter synchronous rectification circuits
• Load switch implementations requiring complementary channel control
• Motor driver output stages for small DC motors

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm exact electrical tolerances and packaging variations. Ensure that the source document explicitly identifies the part as a dual N/P pair before procurement. Cross-reference the datasheet revision date to guarantee alignment with current manufacturing specifications.

Selection Notes

Select this component when space constraints necessitate a dual-transistor solution in an SOIC-8 footprint. Evaluate the thermal resistance parameters relative to the intended PCB copper area to ensure adequate heat dissipation. Confirm that the gate charge requirements align with the driving circuit capabilities for optimal switching efficiency.

Part Context

This part belongs to the Vishay SI4 series of TrenchFET power MOSFETs. The series is characterized by optimized cell density for reduced on-resistance. The dual configuration simplifies bill-of-materials management for designs requiring matched complementary switching elements.

Replacement Considerations

Consult official substitution guides for verified alternatives. Generic equivalents may differ in thermal resistance or gate threshold voltage. Verify pin compatibility and package dimensions before considering any cross-reference.