SI4599DY-T1-GE3

$1.06

Description：MOSFET N/P-CH 40V 6.8A 8SOIC
Series：TrenchFET®

SKU:a6a124f4f8c3 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 40V 6.8A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：6.8A, 5.8A
Rds On (Max) @ Id, Vgs：35.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：640pF @ 20V
Power - Max：3W, 3.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4599DY-T1-GE3

Overview

The Vishay Siliconix SI4599DY-T1-GE3 is a dual N- and P-channel MOSFET array housed in an SO-8 package. It utilizes TrenchFET technology for optimized performance. The N-channel device features a 40 V drain-source voltage (VDS) with a maximum continuous drain current of 6.8 A at TC = 25 °C. Its on-state resistance (RDS(on)) is typically 0.0355 Ω at VGS = 10 V and 5 A, or 0.0425 Ω at VGS = 4.5 V and 4 A. The P-channel counterpart provides a -40 V VDS rating with a typical RDS(on) of 0.045 Ω at VGS = -10 V and -5 A. Both channels are tested for 100% UIS and gate resistance.

Feature Summary

TrenchFET Power MOSFET technology
Halogen-free construction
100% UIS Tested
100% Rg Tested

Applications

Backlight Inverter for LCD Display
Full Bridge Converter

Procurement Notes

Verify the component against the official Vishay datasheet document number 68971 to confirm technical specifications and pinout configuration. Ensure that the ordering suffix matches the required lead-free and halogen-free status. Cross-reference the manufacturer part number with authorized distribution channels to validate authenticity before procurement.

Selection Notes

Select this component when a compact dual-channel solution is required for low-voltage switching applications. Evaluate thermal management requirements based on the specified junction-to-ambient and junction-to-foot thermal resistances. Confirm that the operating gate-source voltage aligns with the logic-level drive capabilities defined in the static characteristics table.

Part Context

This component belongs to the Vishay Siliconix Si4599 series, which integrates complementary N- and P-channel MOSFETs into a single surface-mount package. The SO-8 footprint allows for efficient space utilization in dense circuit board layouts while maintaining robust electrical isolation between the two independent channels.

Replacement Considerations

SI4599DY-T1-E3

FAQ

What is the maximum pulsed drain current for the SI4599DY?

Both the N-channel and P-channel devices support a maximum pulsed drain current (IDM) of 20 A.

Does the SI4599DY include body diodes?

Yes, both channels feature intrinsic body diodes. The reverse recovery time (trr) is typically 19 ns for the N-channel and 26 ns for the P-channel under specific test conditions.