SI4618DY-T1-GE3

Description：MOSFET 2N-CH 30V 8A/15.2A 8SOIC
Series：TrenchFET®

SKU:9b8a163f2799 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 8A/15.2A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：8A, 15.2A
Rds On (Max) @ Id, Vgs：17mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1535pF @ 15V
Power - Max：1.98W, 4.16W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4618DY-T1-GE3

Overview

The Vishay Siliconix SI4618DY-T1-GE3 is a dual N-channel 30-V MOSFET with an integrated Schottky diode in an SO-8 package. Channel-1 features a maximum RDS(on) of 0.017 Ω at VGS = 10 V and ID = 8 A, with a continuous drain current of 8.0 A. Channel-2 offers a lower RDS(on) of 0.010 Ω at VGS = 10 V and ID = 8 A, supporting 15.2 A continuous current. The integrated Schottky diode has a forward voltage of 0.43 V at IF = 1.0 A. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

TrenchFET power MOSFET technology
Halogen-free construction per IEC 61249-2-21
100% gate resistance and unclamped inductive switching tested

Applications

Notebook logic dc-to-dc conversion
Low current dc-to-dc conversion

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The GE3 suffix indicates lead-free and halogen-free compliance, while E3 denotes lead-free only. Confirm that the component remains active in the manufacturer's portfolio, as availability status may change without notice. Ensure all technical parameters meet the design requirements prior to purchase.

Selection Notes

Select this component for applications requiring two independent low-side switches with different current handling capabilities within a single package. Channel-2 provides higher current capacity compared to Channel-1. Verify thermal management strategies based on the specified junction-to-ambient and junction-to-foot thermal resistances under steady-state and transient conditions.

Part Context

This device belongs to the Vishay Siliconix SI4 series of dual N-channel MOSFETs. It integrates two distinct N-channel MOSFETs and a Schottky diode into one compact SO-8 surface-mount package. The product utilizes TrenchFET technology to achieve low on-resistance and fast switching characteristics suitable for portable electronics.