SI4670DY-T1-E3

Overview

The Vishay Siliconix SI4670DY-T1-E3 is a dual N-channel MOSFET with an integrated Schottky diode in an SO-8 package. It features a 25 V drain-source voltage rating and an 8 A continuous drain current capability at TC = 25 °C. The on-state resistance is 0.023 Ω at VGS = 10 V and 0.028 Ω at VGS = 4.5 V. Total gate charge is typically 5.5 nC at VGS = 4.5 V. The device operates within a junction temperature range of -55 °C to 150 °C.

Feature Summary

• TrenchFET power MOSFET technology optimized for PWM applications
• Integrated Schottky diode for synchronous rectification
• Halogen-free construction compliant with IEC 61249-2-21

Applications

• Synchronous buck converters
• Game machines
• Notebooks

Procurement Notes

Verify the specific ordering suffix against official documentation, as it dictates lead and halogen compliance status. Confirm that the component meets RoHS Directive 2002/95/EC requirements before integration into regulated electronic assemblies. Ensure all technical specifications align with the target application constraints.

Selection Notes

Evaluate thermal management requirements based on the maximum junction-to-ambient thermal resistance of 70 °C/W. Consider the low gate charge characteristics for high-frequency switching efficiency. Verify that the 25 V breakdown voltage provides adequate margin for the intended circuit operating conditions.

Part Context

This component belongs to the Si4670 family of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds. The device is designed for surface-mount assembly in compact power management applications.

Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Cross-reference pinout configurations and electrical parameters to ensure compatibility with existing board layouts and circuit designs.