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Product Detailed Parameters
- Description：MOSFET 2N-CH 25V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：23mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：680pF @ 13V
- Power - Max：2.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4670DY-T1-GE3 is a dual N-channel MOSFET with an integrated Schottky diode, utilizing TrenchFET technology in an SO-8 package. It features a drain-source voltage of 25 V and a gate-source voltage of ±16 V. The on-state resistance is 0.023 Ω at VGS = 10 V and 0.028 Ω at VGS = 4.5 V for both channels. Continuous drain current reaches 8.0 A at TC = 25 °C. The integrated Schottky diode supports a forward current of 2.3 A with a forward voltage of 0.43 V at 1.0 A. Total gate charge is typically 5.5 nC at VGS = 4.5 V.
Feature Summary
- TrenchFET Power MOSFET structure optimized for PWM applications
- Integrated Schottky diode for synchronous rectification
- Halogen-free construction compliant with IEC 61249-2-21 definition
Applications
- Synchronous Buck Converter
- Game Machine
- Notebook
Procurement Notes
Verify the specific ordering suffix to confirm halogen-free status, as the GE3 designation indicates compliance with RoHS Directive 2002/95/EC and halogen-free requirements per IEC 61249-2-21. Confirm lead-free (Pb-free) specifications during procurement. Ensure the component matches the SO-8 narrow package dimensions provided in the datasheet for proper footprint compatibility.
Selection Notes
Select this component for low-voltage synchronous rectification where a compact dual configuration is required. Evaluate thermal performance against the junction-to-ambient resistance of 70 °C/W maximum. Consider the 25 V rating and 8.0 A continuous current limits when designing the power stage. Verify that the gate drive voltage aligns with the specified RDS(on) test conditions for optimal efficiency.
Part Context
This part belongs to the Vishay Siliconix SI4 series of dual N-channel MOSFETs. It integrates two independent N-channel MOSFETs and a common Schottky diode within a single SO-8 surface-mount package. The device is designed to replace discrete MOSFET and diode combinations, reducing board space and parasitic inductance in high-frequency switching applications.
Replacement Considerations
The SI4670DY-GE3 is listed as an alias for this component. Verify pinout and electrical parameters match exactly before substitution. No other direct substitute part numbers are confirmed in the official documentation.
