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The Vishay Siliconix SI4804BDY-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET utilizing TrenchFET technology. It features a SO-8 surface-mount package with two independent channels. Key electrical parameters include a drain-source voltage of 30 V, a continuous drain current of 7.5 A at 25 °C, and a maximum power dissipation of 2.0 W at 25 °C. The on-state resistance is specified as 0.022 Ω at VGS = 10 V and 0.030 Ω at VGS = 4.5 V. The device operates within a junction temperature range of -55 to 150 °C.
Verify the component against the official Vishay datasheet Document Number 72061. Confirm that the ordering suffix matches the required lead-free and halogen-free specifications. Ensure the package type and pinout align with the intended PCB layout before finalizing procurement.
Select this component for applications requiring dual N-channel MOSFETs in a compact SO-8 footprint. Consider the 30 V drain-source voltage and low on-resistance characteristics for efficient power switching. Evaluate thermal management requirements based on the specified power dissipation limits.
This part belongs to the Si4804BDY series from Vishay Siliconix. It is designed for high-efficiency power switching applications. The dual-channel architecture allows for space-saving designs in converter circuits.
Check for direct replacements with identical pinouts and electrical ratings. Verify compatibility with existing circuit designs when substituting components.
The absolute maximum gate-source voltage is ± 20 V.
Yes, the datasheet specifies that the device is PWM optimized.
The typical total gate charge is 71 nC under test conditions of VDS = 15 V, VGS = 4.5 V, and ID = 7.5 A.