SI4804BDY-T1-GE3

SI4804BDY-T1-GE3

  • Description:MOSFET 2N-CH 30V 5.7A 8SOIC
  • Series:TrenchFET®

SKU:00724148e4c3 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 5.7A 8SOIC
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:5.7A
  • Rds On (Max) @ Id, Vgs:22mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1.1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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SI4804BDY-T1-GE3

Overview

The Vishay Siliconix SI4804BDY-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET utilizing TrenchFET technology. It features a SO-8 surface-mount package with two independent channels. Key electrical parameters include a drain-source voltage of 30 V, a continuous drain current of 7.5 A at 25 °C, and a maximum power dissipation of 2.0 W at 25 °C. The on-state resistance is specified as 0.022 Ω at VGS = 10 V and 0.030 Ω at VGS = 4.5 V. The device operates within a junction temperature range of -55 to 150 °C.

Feature Summary

  • Dual N-channel configuration in an SO-8 package
  • TrenchFET Power MOSFET technology
  • PWM optimized design
  • Halogen-free construction

Applications

  • Symmetrical Buck-Boost DC/DC Converter

Procurement Notes

Verify the component against the official Vishay datasheet Document Number 72061. Confirm that the ordering suffix matches the required lead-free and halogen-free specifications. Ensure the package type and pinout align with the intended PCB layout before finalizing procurement.

Selection Notes

Select this component for applications requiring dual N-channel MOSFETs in a compact SO-8 footprint. Consider the 30 V drain-source voltage and low on-resistance characteristics for efficient power switching. Evaluate thermal management requirements based on the specified power dissipation limits.

Part Context

This part belongs to the Si4804BDY series from Vishay Siliconix. It is designed for high-efficiency power switching applications. The dual-channel architecture allows for space-saving designs in converter circuits.

Replacement Considerations

Check for direct replacements with identical pinouts and electrical ratings. Verify compatibility with existing circuit designs when substituting components.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage is ± 20 V.

Is the device suitable for high-frequency PWM applications?

Yes, the datasheet specifies that the device is PWM optimized.

What is the typical total gate charge?

The typical total gate charge is 71 nC under test conditions of VDS = 15 V, VGS = 4.5 V, and ID = 7.5 A.

SI4804BDY-T1-GE3SI4804BDY-T1-GE3

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