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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：22mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：865pF @ 15V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4804CDY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 8 A at TC = 25 °C. The on-state resistance (RDS(on)) is typically 0.022 Ω at VGS = 10 V and 0.027 Ω at VGS = 4.5 V. Total gate charge (Qg) is typically 15.4 nC at VGS = 10 V. Maximum power dissipation is 3.1 W at TC = 25 °C, with a junction temperature range of -55 to 150 °C.
Feature Summary
- Dual N-channel configuration within a single SO-8 package
- TrenchFET Power MOSFET technology for optimized performance
- 100% UIS tested for enhanced reliability
Applications
- DC/DC converters
- Notebook system power management
Procurement Notes
Verify the component against official Vishay datasheet document number 68924. Confirm that the ordering suffix -T1-GE3 corresponds to lead-free and halogen-free specifications as documented. Ensure compatibility with standard SO-8 surface mount pad layouts before procurement.
Selection Notes
Select this component for applications requiring two independent N-channel switches in a compact form factor. Evaluate thermal constraints carefully, as maximum power dissipation drops significantly from 3.1 W at 25 °C case temperature to 1.28 W at 70 °C ambient temperature. Verify gate drive voltage requirements against the specified RDS(on) thresholds.
Part Context
This part belongs to the Vishay Siliconix Si4804CDY series of dual N-channel MOSFETs. It is designed specifically for space-constrained power switching applications where dual channel functionality is required without occupying multiple footprints on the PCB.
Replacement Considerations
Consult official Vishay documentation for verified substitute part numbers. Do not assume cross-compatibility with other dual MOSFET packages without validating pinout and electrical parameters.
FAQ
What is the typical total gate charge (Qg) for the SI4804CDY?
The typical total gate charge is 15.4 nC when measured at VDS = 15 V, VGS = 10 V, and ID = 7.5 A.
Is the SI4804CDY-T1-GE3 RoHS compliant?
Yes, the datasheet explicitly states that the device is RoHS compliant and lead-free.
What is the maximum junction-to-ambient thermal resistance?
The maximum junction-to-ambient thermal resistance (RthJA) is 62.5 °C/W under steady-state conditions on a 1" x 1" FR4 board.
