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The Vishay Siliconix SI4814BDY-T1-GE3 is a dual N-channel MOSFET with an integrated Schottky diode, housed in an SO-8 package. It features a 30-V drain-source voltage and low on-resistance of 0.018 Ω at VGS = 10 V for both channels. Continuous drain current reaches 10 A for Channel 1 and 10.5 A for Channel 2 at TC = 25 °C. The device includes a Schottky diode with a forward voltage of 0.50 V at 1.0 A. Operating junction temperature ranges from -55 °C to +150 °C.
Verify the specific ordering suffix when sourcing components. The GE3 designation indicates lead-free and halogen-free compliance, whereas E3 denotes lead-free status only. Confirm that the required version matches the environmental specifications of your assembly process before placing orders.
Select this component for applications requiring two independent low-side switches and a common cathode Schottky diode within a single footprint. Evaluate thermal dissipation requirements against the specified maximum power ratings. Ensure gate drive voltages align with the threshold characteristics for optimal RDS(on) performance.
This part belongs to the Vishay LITTLE FOOT Plus family, designed to maximize power handling in compact surface-mount packages. The integration of a Schottky diode alongside dual MOSFETs reduces board space and simplifies circuit topology for synchronous rectification or freewheeling applications.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters if considering alternative manufacturers.