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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 5.3A/7A 8SOIC
- Series：LITTLE FOOT®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.3A, 7A
- Rds On (Max) @ Id, Vgs：22mOhm @ 6.3A, 10V
- Vgs(th) (Max) @ Id：800mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1W, 1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4818DY-T1-E3 is a dual N-channel 30-V (D-S) MOSFET with an integrated Schottky diode, housed in an SO-8 LITTLE FOOT Plus package. Channel-1 offers RDS(on) of 0.022 Ω at VGS = 10 V and 6.3 A continuous drain current. Channel-2 provides lower resistance at 0.0155 Ω under the same conditions, supporting 9.5 A. The integrated Schottky diode features a forward voltage of 0.50 V at 1.0 A and supports 2.0 A forward current. Thermal resistance from junction to ambient is typically 100 °C/W for steady-state operation.
Feature Summary
- Integrates two independent N-channel MOSFETs and a Schottky barrier diode within a single surface-mount package.
- Utilizes TrenchFET technology to achieve low on-state resistance for efficient power switching.
- Compliant with RoHS directives and halogen-free according to IEC 61249-2-21 definition.
Applications
- Synchronous rectification in DC/DC converters
- High-side and low-side power switching applications
- Power management circuits requiring compact footprint
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the presence of the E3 suffix indicating lead-free composition. Ensure storage conditions remain within specified limits to prevent moisture absorption prior to reflow soldering. Validate that the specific revision matches design requirements.
Selection Notes
Select this component when space constraints necessitate combining dual MOSFETs and a freewheeling diode into one package. Evaluate thermal performance based on the specific PCB copper area available for heat dissipation. Compare gate charge parameters against driver capabilities to ensure adequate switching speeds without excessive losses.
Part Context
This device belongs to the Si48xx series of dual MOSFETs from Vishay Siliconix. It shares the LITTLE FOOT Plus form factor with similar high-density power solutions. The integration reduces board space compared to discrete component arrangements while maintaining robust electrical isolation between channels.
Replacement Considerations
Direct replacements must match the SO-8 pinout and electrical ratings. Verify that alternative parts support the required 30-V breakdown voltage and comparable RDS(on) values. Check if the substitute includes an integrated Schottky diode or requires external components to fulfill the circuit function.
