ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 5.3A/7A 8SOIC
- Series：LITTLE FOOT®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.3A, 7A
- Rds On (Max) @ Id, Vgs：22mOhm @ 6.3A, 10V
- Vgs(th) (Max) @ Id：800mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1W, 1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
Download product information
Overview
The Vishay Siliconix SI4818DY-T1-GE3 is a dual N-channel MOSFET with an integrated Schottky diode, utilizing TrenchFET technology in an SO-8 package. Channel-1 offers a maximum RDS(on) of 0.022 Ω at VGS = 10 V and a continuous drain current (ID) of 6.3 A. Channel-2 provides a lower RDS(on) of 0.0155 Ω at VGS = 10 V with an ID of 9.5 A. The device features a 30 V drain-source voltage rating and operates within a junction temperature range of -55 °C to 150 °C. The integrated Schottky diode supports a forward current of 2.0 A with a typical forward voltage drop of 0.50 V at 1.0 A.
Feature Summary
- Dual N-channel configuration with integrated Schottky diode for synchronous rectification applications
- TrenchFET power MOSFET technology designed for low on-resistance and fast switching performance
- LITTLE FOOT Plus package format optimized for surface-mount thermal management
Applications
- Synchronous rectification in DC/DC converters
- Low voltage power switching circuits
- Battery protection and load switch designs
Procurement Notes
Verify the specific ordering suffix GE3 to confirm halogen-free compliance according to IEC 61249-2-21 definitions. Ensure that the SO-8 package dimensions match the target PCB footprint requirements. Confirm RoHS directive 2002/95/EC compliance status prior to final component selection for regulated markets.
Selection Notes
Select this component when a compact dual-N channel solution with an integrated body diode replacement is required. Compare Channel-1 and Channel-2 specifications to determine optimal pin assignment based on current handling needs. Evaluate thermal resistance ratings against the expected ambient temperature and power dissipation constraints of the application.
Part Context
This part belongs to the Vishay Siliconix Si48 series of LITTLE FOOT Plus MOSFETs. It integrates two independent N-channel devices and a Schottky diode into a single SO-8 package, reducing board space compared to discrete solutions. The TrenchFET technology ensures improved switching characteristics relative to standard planar MOSFETs.
Replacement Considerations
Direct replacements must match the SO-8 package, 30 V rating, and dual-N channel + Schottky topology. Verify pinout compatibility and thermal resistance values. Consult Vishay documentation for updated series alternatives if availability is constrained.
