SI4830CDY-T1-E3

Overview

The Vishay Siliconix SI4830CDY-T1-E3 is a dual N-channel 30-V MOSFET with an integrated Schottky diode in an SO-8 package. It features a maximum continuous drain current of 8.0 A at TC = 25 °C and a typical on-state resistance (RDS(on)) of 0.020 Ω at VGS = 10 V. The device includes a Schottky diode with a forward voltage of 0.51 V at IF = 1.0 A. Operating junction temperature ranges from -55 °C to +150 °C, with a maximum power dissipation of 2.9 W at TC = 25 °C.

Feature Summary

• LITTLE FOOT Plus Schottky packaging for optimized thermal performance
• PWM optimized design for efficient switching applications
• 100% UIS tested for enhanced avalanche ruggedness

Applications

• Notebook logic dc-to-dc converters
• Low current dc-to-dc converters

Procurement Notes

Verify the component against official datasheet specifications before integration. Confirm that the ordering suffix matches the required lead-free and halogen-free compliance standards. Ensure the package type aligns with the intended PCB footprint and mounting requirements.

Selection Notes

Select this component for low-voltage synchronous rectification or high-side switching where compact dual-channel integration is beneficial. Evaluate thermal management needs based on the specified junction-to-ambient resistance values under expected load conditions.

Part Context

This part belongs to the Vishay LITTLE FOOT series, designed for surface-mount applications requiring high power density. The SO-8 package provides a balance between thermal dissipation capabilities and board space efficiency for portable electronic devices.

Replacement Considerations

SI4830CDY-T1-GE3 is a verified alternative offering identical electrical characteristics with explicit halogen-free certification.