SI4834BDY-T1-E3

Overview

The SI4834BDY-T1-E3 is a Vishay Siliconix N-channel Power MOSFET utilizing TrenchFET technology. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 25 A at 25°C. The device offers a maximum on-resistance (Rds(on)) of 7.5 mΩ at a gate-source voltage (Vgs) of 10 V. Packaged in an SO-8 surface-mount case, it supports a junction temperature range from -55°C to +150°C with a power dissipation rating of 6 W.

Feature Summary

• TrenchFET power MOSFET technology for optimized performance
• Low on-resistance for efficient power switching
• Surface-mount SO-8 package for compact integration

Applications

• DC-DC converter circuits
• Power management modules
• Load switching applications

Procurement Notes

Verify the specific datasheet revision and electrical parameters directly from the manufacturer before implementation. Confirm RoHS compliance status and lead times through authorized distributors. Ensure thermal management requirements are met for the specified power dissipation limits in the final design.

Selection Notes

Select this component for low-voltage, high-current applications requiring low conduction losses. Compare Rds(on) values against alternative packages for thermal constraints. Verify gate charge characteristics for switching speed requirements in the target circuit topology.

Part Context

This part belongs to the Vishay SI4 series of TrenchFET MOSFETs. It shares the SO-8 package form factor with other devices in the family but differs in voltage and current ratings. It serves as a discrete solution for power control in consumer and industrial electronics.

Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current class. Verify that substitute parts meet or exceed the original Rds(on) and thermal specifications. Review updated datasheets for any changes in recommended operating conditions.