SI4834BDY-T1-GE3

Overview

The SI4834BDY-T1-GE3 is a single N-channel Power MOSFET from the Vishay Siliconix SI4 series, utilizing TrenchFET technology. It is housed in an SOIC-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 25 A at case temperature. The maximum on-resistance (Rds(on)) is specified as 6.5 mΩ at a gate-source voltage (Vgs) of 10 V. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 3.7 W at ambient temperature.

Feature Summary

• TrenchFET technology for optimized low on-resistance performance
• Enhancement mode operation for efficient switching control
• Lead-free finish compliant with RoHS directives

Applications

• DC-DC converter circuits
• Load switch applications
• Power management modules

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer confirmation. Request original datasheets and material compliance certificates to ensure adherence to specifications. Confirm package integrity and marking accuracy upon receipt to prevent installation errors in sensitive electronic assemblies.

Selection Notes

Select this component when a 30 V N-channel MOSFET with low Rds(on) in an SOIC-8 package is required. Ensure thermal design accommodates the 3.7 W ambient power dissipation limit. Verify that the driving circuit provides sufficient gate voltage to achieve the specified 6.5 mΩ on-resistance threshold.

Part Context

This part belongs to the Vishay SI4 family of TrenchFET MOSFETs, designed for high-efficiency power switching. The SI4834 variant specifically targets 30 V applications requiring moderate current handling in compact surface-mount footprints. It complements other devices in the series offering different voltage and current ratings within the same package constraint.

Replacement Considerations

SI4834CDY-T1-GE3 is a documented alternate part number within the same product line.