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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 5.3A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：5.3A
- Rds On (Max) @ Id, Vgs：58mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：665pF @ 15V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4900DY-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a drain-source voltage rating of 60 V and a continuous drain current of 5.3 A at a case temperature of 25 °C. The on-state resistance is specified as 0.058 Ω at VGS = 10 V and 0.072 Ω at VGS = 4.5 V. Total gate charge is typically 13 nC at VGS = 10 V. The device supports an operating junction temperature range from -55 °C to 150 °C.
Feature Summary
- TrenchFET power MOSFET architecture
- Halogen-free construction according to IEC 61249-2-21
Applications
- LCD TV CCFL Inverter
Procurement Notes
Verify the component against the official Vishay datasheet document number 73272. Confirm that the marking on the physical package matches the SI4900DY identifier. Ensure the ordering suffix corresponds to lead-free specifications. Validate all electrical parameters directly with the manufacturer before finalizing procurement decisions.
Selection Notes
Evaluate thermal management requirements based on the maximum junction-to-ambient thermal resistance of 62.5 °C. Consider the specific gate drive voltage levels required to achieve the target on-resistance values. Verify that the application current does not exceed the continuous or pulsed drain current limits under the expected operating temperatures.
Part Context
This component belongs to the Vishay Siliconix Si4900DY series of dual N-channel MOSFETs. It is manufactured using silicon technology and is designed for surface mounting. The product line utilizes TrenchFET technology to optimize performance characteristics for power switching applications.
Replacement Considerations
The Si4900DY-T1-GE3 is documented as a lead-free and halogen-free alternative within the same series.
FAQ
What is the typical total gate charge (Qg) for this device?
The typical total gate charge is 13 nC when tested at VDS = 30 V, VGS = 10 V, and ID = 4.3 A.
What is the maximum power dissipation at a case temperature of 25 °C?
The maximum power dissipation is 3.1 W when the case temperature is maintained at 25 °C.
What are the turn-on delay time and rise time specifications?
At VDD = 30 V, RL = 8.8 Ω, ID ≈ 3.4 A, VGEN = 4.5 V, and Rg = 1 Ω, the turn-on delay time is 15 ns and the rise time is 65 ns.
