SI4906DY-T1-GE3

Overview

The Vishay Siliconix SI4906DY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage (VDS) of 40 V and a continuous drain current (ID) of 6.6 A at TC = 25 °C. The on-state resistance (RDS(on)) is typically 0.039 Ω at VGS = 10 V and 0.050 Ω at VGS = 4.5 V. Total gate charge (Qg) is typically 14.4 nC at VGS = 10 V. The device supports a maximum junction temperature range from -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration within a single SO-8 package
• TrenchFET power MOSFET technology for optimized performance
• Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

• CCFL Inverter circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. The GE3 designation indicates lead-free and halogen-free status per IEC 61249-2-21. Confirm RoHS Directive 2002/95/EC compliance through manufacturer datasheets before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring two matched N-channel switches in a compact surface-mount footprint. Evaluate thermal derating curves based on ambient conditions, as power dissipation drops significantly above 70 °C case temperature. Ensure gate drive voltages align with the specified RDS(on) thresholds for optimal efficiency.

Part Context

This part belongs to the Vishay Siliconix Si4906DY series of dual N-channel MOSFETs. It is manufactured using TrenchFET technology and is available in the SO-8 surface mount package. The product line emphasizes low on-resistance and high switching speed suitable for power management applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the verified source material.