SI4908DY-T1-E3

$1.16

Description：MOSFET 2N-CH 40V 5A 8SOIC
Series：TrenchFET®

SKU:b158911a766a Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 5A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：5A
Rds On (Max) @ Id, Vgs：60mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：355pF @ 20V
Power - Max：2.75W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4908DY-T1-E3

Overview

The SI4908DY-T1-E3 is a dual N-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an 8-SOIC surface-mount package. The device features a drain-source breakdown voltage of 40 V and supports a continuous drain current of 5 A. Key electrical parameters include a maximum on-resistance of 275 mΩ, a gate threshold voltage of 2 V, and a total gate charge of 42 nC. Power dissipation is rated at 2.75 W, with an operating temperature range from -55°C to +150°C.

Feature Summary

Dual configuration integrating two independent N-channel MOSFETs within a single compact SOIC-8 package for space-efficient circuit design.
TrenchFET technology implementation providing optimized on-resistance characteristics for efficient power switching applications.

Applications

DC-DC converter circuits requiring dual-switch topologies
Motor control systems utilizing low-voltage power stages
Power management modules for portable electronic devices

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm lead-free status and halogen-free compliance. Ensure the component matches the exact Vishay Siliconix part number to avoid compatibility issues with existing PCB layouts and thermal management designs.

Selection Notes

Select this component when a dual N-channel configuration is required for low-voltage applications. The 40 V rating and 5 A current capacity suit moderate power switching needs. Consider the SOIC-8 footprint constraints and thermal dissipation requirements relative to the 2.75 W power rating during board layout.

Part Context

This component belongs to the SI49 series of dual MOSFETs from Vishay Siliconix. It serves as a specialized alternative to discrete single-channel solutions, offering reduced board space and simplified assembly processes for applications requiring paired switching elements.