SI4908DY-T1-GE3

$0.31

Description：MOSFET 2N-CH 40V 5A 8SOIC
Series：TrenchFET®

SKU:408d58568fd7 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 5A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：5A
Rds On (Max) @ Id, Vgs：60mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：355pF @ 20V
Power - Max：2.75W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4908DY-T1-GE3

Overview

The SI4908DY-T1-GE3 is a single N-channel Power MOSFET manufactured by Vishay Semiconductors using TrenchFET technology. It features an SOIC-8 surface-mount package and operates with a drain-source voltage of 60V and a continuous drain current of 5A at 25°C. The device exhibits a maximum on-resistance of 27 milliohms at a gate-source voltage of 10V, with a gate charge of 16 nanocoulombs. It supports a junction temperature range from -55°C to +150°C and has a power dissipation rating of 2W.

Feature Summary

Utilizes TrenchFET technology for optimized on-resistance and switching performance
Designed for surface-mount applications in compact SOIC-8 packages
Enhancement mode operation suitable for logic-level driving

Applications

DC-DC converter circuits
Load switching applications
Power management systems

Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to ensure correct packaging configuration. Confirm RoHS compliance status through the manufacturer's datasheet or component specifications page before procurement. Cross-reference the Mouser part number 781-SI4908DY-GE3 for accurate product identification during sourcing.

Selection Notes

Select this component when a 60V N-channel MOSFET with low on-resistance is required in an SOIC-8 footprint. Ensure the application current does not exceed the 5A continuous limit at the expected ambient temperature. Verify that the gate drive voltage aligns with the specified threshold characteristics for efficient switching.

Part Context

This component belongs to the SI4 series of TrenchFET MOSFETs from Vishay Siliconix. The family focuses on high-performance power switching solutions in small outline packages. The SI4908 variant specifically targets 60V applications requiring efficient thermal management and low conduction losses in space-constrained designs.

Replacement Considerations

Check for direct substitutes within the Vishay SI49xx series or equivalent 60V N-channel devices in SOIC-8 packages. Verify pinout compatibility and electrical parameter margins before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.