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Product Detailed Parameters
- Description：MOSFET 2P-CH 40V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：27mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2000pF @ 20V
- Power - Max：3.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4909DY-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology. It features a -40 V drain-source voltage and an on-state resistance of 27 mΩ at VGS = -10 V. The device supports a continuous drain current of -8 A and dissipates up to 3.2 W. Packaged in an SO-8 surface-mount format, it operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Dual P-channel configuration with TrenchFET power MOSFET architecture
- 100% Rg and UIS tested for reliability
Applications
- Load switches for notebook PCs
- Load switches for desktop PCs
Procurement Notes
Verify the component against official Vishay datasheet specifications before integration. Confirm that the SO-8 package dimensions and pinout align with your PCB layout requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under expected operating conditions.
Selection Notes
Select this component for low-voltage load switching applications requiring dual channel control. Evaluate the gate charge and threshold voltage compatibility with your driver circuitry. Consider the thermal performance characteristics when designing for high-current scenarios or limited airflow environments.
Part Context
This part belongs to the Vishay SI4 series of power MOSFETs. It is specifically designed as a dual P-channel device, offering space-saving integration compared to using two discrete single-channel transistors. The TrenchFET technology provides optimized on-resistance and switching performance.
Replacement Considerations
Check for direct replacements within the Vishay SI49xx family or equivalent dual P-channel MOSFETs from other manufacturers. Verify pinout compatibility and electrical parameter equivalence, particularly RDS(on) and VGS(th), before substitution.
