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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 7.6A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：7.6A
- Rds On (Max) @ Id, Vgs：27mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：855pF @ 20V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4910DY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage (VDS) of 40 V and a gate-source voltage (VGS) rating of ±16 V. At TC = 25 °C, the continuous drain current (ID) reaches 7.6 A, while at TA = 25 °C on FR4, it is rated at 6.0 A. The maximum on-state resistance (RDS(on)) is 0.027 Ω at VGS = 10 V with ID = 6 A, and 0.032 Ω at VGS = 4.5 V with ID = 4.8 A. Total gate charge (Qg) is typically 21 nC at VGS = 10 V. The device supports an operating junction temperature range from -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration within a single surface-mount package
- TrenchFET power MOSFET technology for optimized performance
- Halogen-free construction compliant with IEC 61249-2-21 standards
Applications
- CCFL Inverter circuits
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and halogen-free status against the latest datasheet revision. Ensure storage conditions remain within specified limits to prevent moisture damage prior to soldering. Validate that the specific ordering suffix matches the required lead-free and halogen-free specifications.
Selection Notes
Select this component for applications requiring two independent N-channel switches in a compact footprint. Evaluate thermal management requirements based on the specified junction-to-ambient and junction-to-case thermal resistances. Consider the low RDS(on) values for efficient power switching in low-voltage environments. Verify that the 40 V breakdown voltage aligns with the circuit's maximum operational stress levels.
Part Context
This part belongs to the Vishay Siliconix SI49 series of dual MOSFETs. It utilizes the standard SO-8 surface mount package. The product is manufactured using silicon technology and incorporates TrenchFET architecture. The GE3 suffix indicates lead-free and halogen-free compliance.
Replacement Considerations
Consult official Vishay documentation for verified replacement part numbers. Cross-referencing requires matching electrical parameters, package dimensions, and thermal characteristics.
