SI4913DY-T1-GE3

Overview

The SI4913DY-T1-GE3 is a dual N-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in an SOIC-8 surface-mount package. The device features a drain-source voltage rating of 30V and a continuous drain current of 8A per channel. Key electrical parameters include a maximum on-resistance of 20 milliohms at a gate-source voltage of 10V. The component operates within a temperature range from -55°C to +175°C junction temperature. It is supplied in cut tape or reel packaging formats.

Feature Summary

• Dual configuration integrating two independent N-channel enhancement mode field-effect transistors within a single compact package.
• TrenchFET power transistor technology designed to achieve low on-resistance for improved efficiency.
• Lead-free finish compliant with RoHS directives, ensuring environmental safety standards.

Applications

• DC-DC converter circuits requiring synchronous rectification.
• Load switching applications in portable electronic devices.
• Power management systems for automotive electronics.

Procurement Notes

Verify the specific suffix designation when sourcing replacements, as manufacturing updates may alter packaging or compliance markings without changing the core electrical function. Confirm availability status through authorized distributors, as this component may be subject to end-of-life notices or limited stock conditions. Ensure that the supplier provides valid traceability documentation matching the Vishay Siliconix part number.

Selection Notes

Select this component for designs requiring matched dual N-channel performance in a small footprint. Evaluate the thermal resistance characteristics against the expected power dissipation in the target application. Compare the gate charge specifications with the driving circuit capabilities to ensure adequate switching speeds. Verify that the 30V voltage rating provides sufficient margin for the system's operating conditions.

Part Context

This part belongs to the SI4 series of dual MOSFETs from Vishay Siliconix. The series is characterized by high-density integration and low on-resistance values suitable for space-constrained power applications. The SI4913DY variant specifically addresses needs for dual-channel control in compact form factors.

Replacement Considerations

Check for direct cross-references such as SI4913DY-GE3. Verify pinout compatibility and electrical parameter equivalence before substitution. Consult official manufacturer databases for updated lifecycle status and approved alternative part numbers.