SI4914BDY-T1-E3

Description：MOSFET 2N-CH 30V 8.4A/8A 8SOIC
Series：LITTLE FOOT®

SKU:a1e08a94b38c Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 8.4A/8A 8SOIC
Series：LITTLE FOOT®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：8.4A, 8A
Rds On (Max) @ Id, Vgs：21mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：2.7W, 3.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4914BDY-T1-E3

Overview

The Vishay Siliconix SI4914BDY-T1-E3 is a dual N-channel MOSFET with an integrated Schottky diode in an SO-8 package. It features a 30-V drain-source voltage rating and low on-resistance of 0.021 Ω at VGS = 10 V for Channel-1. Continuous drain current reaches 8.4 A at TC = 25 °C. The device includes a 30-V, 2.0-A Schottky diode with a forward voltage of 0.50 V at IF = 1.0 A. Total gate charge is typically 6.7 nC for Channel-1. Thermal resistance from junction to ambient is 59 °C/W typical.

Feature Summary

Integrated Schottky diode reduces component count and board space
Halogen-free construction compliant with IEC 61249-2-21 definition
100% tested for gate resistance and unclamped inductive switching

Applications

Notebook PC system power dc-to-dc conversion

Procurement Notes

Verify the ordering suffix matches the required lead finish. The -T1-E3 suffix indicates lead (Pb)-free packaging. Confirm the document revision aligns with current manufacturing standards. Ensure the SO-8 package dimensions meet PCB layout requirements. Validate that the thermal management design supports the specified junction-to-ambient resistance values under actual operating conditions.

Selection Notes

Select this component when a compact dual MOSFET solution with synchronous rectification capability is needed. The integrated Schottky diode eliminates the need for external fast-recovery diodes. Consider the 30-V voltage rating for low-voltage DC-DC converters. Evaluate the gate charge specifications against driver capabilities to ensure efficient switching performance in notebook power systems.

Part Context

This part belongs to the Si4914BDY family of dual N-channel MOSFETs with integrated Schottky diodes. The series is designed for high-density power applications requiring minimal footprint. The SO-8 package provides efficient thermal dissipation through the drain pad. Vishay Siliconix manufactures these devices using advanced MOS technology for low on-resistance and fast switching speeds.